觸控用化學強化玻璃

觸控用化學強化玻璃： 厚度：厚度：0.33mm/0.4mm/0.5mm/0.7mm/0.85mm/0.9mm/1.0mm/1.1mm/1.5mm/1.6mm/1.8mm/2.8mm

可生產尺寸：355*406mm/355*431mm/400*300mm/470*370mm/500*400mm/920*730mm/1300*1100mm/1850*1500mm

應力值：＞400MPa

置換層：6-10μｍ 或 ＞12μｍ 

觸控用矽酸鹽高強化玻璃(大猩猩Gorilla Glass 熊貓Panda glass 暴龍)： 厚度：0.33mm/0.4mm/0.5mm/0.7mm/0.85mm/0.9mm/1.0mm/1.1mm/1.5mm/1.6mm/1.8mm/2.8mm

可生產尺寸：355*406mm/355*431mm/400*300mm/470*370mm/500*400mm/920*730mm/1300*1100mm/1850*1500mm

應力值：＞550MPa ＞650MPa

置換層：35-55μｍ 

 

 

4"silicon wafer

Diameter:100mm

Thickeness:525±25um

Type/Dopant:P/Boron

Orientation:<100>

Resistivity:1-10ohm-cm

Flate:32.5±2.5mm

Single side polished

 

6"silicon wafer

Diameter:150mm

Thickeness:650-700±25um

Type/Dopant:P/Boron

Orientation:<100>

Resistivity:1-10ohm-cm

Flate:32.5±2.5mm

Single side polished

 

8"silicon wafer

Diameter:200mm

Thickeness:725+/-25um

Type/Dopant:P/Boron

Orientation:<100>

Resistivity:1-100ohm-cm

Single side polished

 

12"silicon wafer

Diameter:300mm

Thickeness:725+/-25um

Type:P

Orientation:<100>

Resistivity:1-100ohm-cm

Double side polished

8"CZ Prime Polished wafer

Diameter:200±1mm

Thickeness:725±20um

Type/Dopant:P/Boron

Orientation:<100>

Resistivity:<0.0035ohm-cm

Flate:

Notch Ang:Per SEMI

Notch Dep:Per SEMI

Location:(100)+/-1

Frontside:Mirror Polish

Backside:BSD+LTO

TTV:<10um

Bow/Warp:<90um

Particle:≧0.20um@≦25ppw

 

8"CZ Prime Polished wafer

Diameter:150±0.5mm

Thickeness:625±25um

Type/Dopant:P/Boron

Orientation:<100>

Resistivity:<0.004-0.007ohm-cm

Flate:

Second Flat:None

Primary Flat Location:｛110｝± 1°

Primary Flat Length:57.5± 2.5 mm

Frontside:Mirror Polish

Backside:LOT4000-8000A

TTV:< 10um

Bow/Warp:<60um

Particle:≧0.30um@ ≦15ppw

8"CZ Prime Polished wafer

Diameter:150±0.5mm

Thickeness:625±25um

Type/Dopant:P/Boron

Orientation:<100>

Resistivity:0.0013-0.0025ohm-cm

Flate:

Second Flat:None

Primary Flat Location:｛110｝± 1°

Primary Flat Length:57.5± 2.5 mm

Frontside:Mirror Polish

Backside:LOT4500-5500A

TTV:<10um

Bow/Warp:<40um

Particle:≧0.30um@≦ 5ppw

 

8"CZ Prime Polished wafer

Diameter:200±1mm

Thickeness:725±20um

Type/Dopant:P/Boron

Orientation:<100>

Resistivity:0.003-0.005ohm-cm

Flate:

Notch Ang:Per SEMI

Notch Dep:Per SEMI

Location:(100)+/-1

Frontside:Mirror Polish

Backside:BSD+LTO

TTV:<4um

Bow/Warp:<90um

Particle:≧0.20um@ ≦25ppw

 

6 Inch Prime wafer   10 PCS

 

Diameter:    150 mm  

Thickeness:  650 ± 25 um

Type/Dopant:  P / Boron 

Orientation:  <100>   

Resistivity:  10000 ohm-cm   

Single side polished 

6 Inch Prime wafer   10 PCS

 

Diameter:    150 mm  

Thickeness:  650 ± 25 um

Type/Dopant:  P / Boron 

Orientation:  <100>   

Resistivity:  10000 ohm-cm   

Single side polished 

 

-------------------------------------------------

8 Inch Prime wafer    12 PCS

 

Diameter:  200  mm  

Thickeness:  725+  /  -25  um

Type/Dopant:  P  /  Boron Orientation:  <100>  

Resistivity:  1以下  ohm-cm  

Single  side polished

-------------------------------------------------

 

4 Inch             單拋單氧 wafer  10 PCS

 

Diameter:    100 mm  

Thickeness:  500 ± 25 um

Type/Dopant:  N / Boron 

Orientation:  <100>   

Resistivity:  35-40 ohm-cm   

Single side polished              oxidation : 2um

-------------------------------------------------

8 Inch Prime wafer    12 PCS

 

Diameter:  200  mm  

Thickeness:  725+  /  -25  um

Type/Dopant:  P  /  Boron Orientation:  <100>  

Resistivity:  1以下  ohm-cm  

Single  side polished

-------------------------------------------------

 

4 Inch             單拋單氧 wafer  10 PCS

 

Diameter:    100 mm  

Thickeness:  500 ± 25 um

Type/Dopant:  N / Boron 

Orientation:  <100>   

Resistivity:  35-40 ohm-cm   

Single side polished              oxidation : 2um

Silicon wafer

 

 

2”4”6”8”12”

Diameter

50.8mm

100mm

150mm

200mm

300mm

Type

P-type or N-type

Dopant

Boron/Arsenic/Phosphorus/Antimony

Orientation  

<100>,<110>,<111>

Resistivity

0.0001 ohm-cm ~30K ohm-cm

 

SOI (Silicon on insulation) wafer

Diameter

3"~8"

Handle Layer Specification

Thickness

250-800μm

Type P or N

Dopant Boron, Sb or Phos. As.

Resistivity 0.001~>1,000Ω-cm

Growth Method CZ or FZ

Orientation<100>,<110>,<111>

Backside finish

Lapped/Etched; Polished

Buried Oxide Specification

Oxide grown on

Handle, Device or Both

 

BOX thickness0.2-5μm

Device Layer Specification

Thickness2-300μm

Type P or N

Dopant Boron, Sb or Phos. As.

Resistivity 0.001~>1,000Ω-cm

Growth Method CZ or FZ

Orientation <100>,<110>,<111>

 

Sapphire wafer2”4”6”

Diameter50.8mm100mm150mm

Thicknessstandard

OrientationC, A, R

Warp≦25μm

Bow≦25μm

TTV≦25μm

Front Surface

EPI polished(less than 5A)

Back SurfaceFine grind or polished

 

Glass / QuartSpecification

Glass Soda Lime/ Borofloat / Eagle XG / Others

Quartz Fused Silica, Quartz Crystal

Size2”~8”, Other shapes and sizes also available

Thickness0.5~1.8 mm, Made-to-order

Surface finish one side or two sides polished

Flatas SEMI. Standard

TTV<= 20 μm

Surface roughness

Ra <= 15 A

LiTaO3 / LiNbO3 Wafer

Black-LT and Black-LN

Specification of Bulk resistivity, Bulk conductivity

Black-LT

Standard Black

Super Black

Bulk Resistivity(Ω-cm)

0.9E+11~9.9E+11

1.0E+11~9.9E+10

Bulk Conductivity(ΩE-1-cmE-1)

1.11E-11~1.11E-12

1.0E-10~1.11E-11

Black-LN

Standard Black

Bulk Resistivity(Ω-cm)

1.0E+10~9.9E+10

Bulk Conductivity(ΩE-1-cmE-1)

1.11E-11~1.11E-12

Typical Specifications

Black-LT wafers

Orientation Diameter(mm) Thickness(mm)        Surface finish   

(+)plane (-)plane

36         Y-cut

38.7       Y-cut

42         Y-cut

48         Y-cut

X-112    Y-cut 76.2

100.0

0.25

0.35

0.50

Mirror

Polished

Black-LN wafers

 

Orientation Diameter(mm) Thickness(mm) Surface finish   

(+)plane (-)plane

Y-Zcut

41    Y-cut

64    Y-cut

127.86   Y-cut      76.2

100.0

0.25

0.35

0.50 Mirror

Polished

EPI Wafer (Silicon Epitaxial Wafer) / SiC Wafer / GaAs Wafer / InP Wafer / Others

Glass, 玻璃 (Glass), 石英 (Quartz), 矽 (Silicon), 與特殊材料

矽晶圓  Silicon wafer

SOI wafer, CZ & FZ, P & N type, 100 & 111, Low & High resistance, Prime & Test grade.